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FBR808

EIC discrete Semiconductors

FAST RECOVERY BRIDGE RECTIFIERS

FBR800 - FBR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * * High case dielectric strength High surge...


EIC discrete Semiconductors

FBR808

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Description
FBR800 - FBR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY BRIDGE RECTIFIERS BR10 φ 0.158 (4.00) 0.142 (3.60) 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.520 (13.20) 0.480 (12.20) AC 0.052 (1.32) 0.048 (1.22) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams 0.30 (7.62) 0.25 (6.35) 0.75 (19.1) Min. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 4.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time (Note 1) Typical Ther...




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