FC106

Ordering number:EN3074 FC106 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC106 is formed with two chips, being equivalent to the 2SC3395, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC106] Electrical Connection E1:Emitter1 B1:Base1 C2:Collector2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1unit Conditions Ratings 50 50 10 100 200 200 300 150 –55 to+150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=5mA VCE=10V, IC=5mA VCB=10V, f=1MHz 50 50 0.8 1.0 32 0.9 1.1 2.5 47 1.0 1.5 5.0 62 1.1 30 50 250 3.3 0....