FC108

Ordering number:EN3076 FC108 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC108] Electrical Connection C1:Collector1 C2:Collector2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 10 100 200 200 300 150 –55 to+150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Co b VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=5mA VCE=10V, IC=5mA VCB=10V, f=1MHz 50 50 0.8 1.0 32 0.9 1.1 2.5 47 1.0 1.5 5.0 62 1.1 30 50 250 3.3 0.1 0....