FC111

Ordering number:EN3079 FC111 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC111 is formed with two chips, being equivalent to the 2SA1342, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC111] Electrical Connection C1:Collerctor1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –10 –100 –200 200 300 150 –55 to+150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=–40V, IE=0 VCE=–40V, IB=0 VEB=–5V, IC=0 VCE=–5V, IC=–5mA VCE=–10V, IC=–5mA VCB=–10V, f=1MHz –50 –50 –0.8 –1.0 15 0.9 –1.1 –1.9 22 1.0 –1.5 –3.0 29 1....