FC113

Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC113 is formed with two chips, being equivalent to the 2SA1344, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC113] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –10 –100 –200 200 300 150 –55 to+150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=–40V, IE=0 VCE=–40V, IB=0 VEB=–5V, IC=0 VCE=–5V, IC=–10mA VCE=–10V, IC=–5mA VCB=–10V, f=1MHz –50 –50 –0.8 –1.0 7.0 0.9 –1.1 –2.0 10 1.0 –1.5 –...