FC128

Ordering number:EN3282 FC128 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias resistance (R1=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC128 is formed with two chips, being equivalent to the 2SC3859, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection Package Dimensions unit:mm 2067 [FC128] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 5 100 200 200 300 150 –55 to +150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Symbol ICBO IEBO hFE fT Co b VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=5mA VCB=10V, f=1MHz 50 50 0.4 0.7 7 0.55 1.2 10 0.8 3.0 13 100 250 3.3 0.1 0.3 MHz pF V V V V V kΩ Conditons Ratings min...