FC13

Ordering number:EN4336 FC13 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Features · Composite type with 2 FETs contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC13 is formed with two chips, being equivalent to the 2SK303, placed in one package. · Excellent in thermal equilibrium and pair capability and especially suited for differential amp. Package Dimensions unit:mm 2095A [FC13] Electrical Connection 1:Source1 2:Drain1 3:Gate2 4:Source2 5:Drain2 6:Gate1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD PT Tj Tstg 1unit Conditions Ratings 30 –30 10 10 200 300 150 –55 to +150 Unit V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter G-D Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage G-S Voltage Drop Drain Current Drain Current Ratio Forward Transfer Admittance Forward Transfer Admittance Ratio Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Ciss Crss RDS(on) | Yfs | Symbol V(BR)DGD IG=–10µA, VDS=0 IGSS VGS=–20V, VDS=0 VGS(off) ∆VGS IDSS VDS=10V, ID=1µA VGS(small/large), VDS=10V, ID=1mA VDS=10V, VGS=0 VDS=10V, IDSS(small/large) VDS=10V, VGS=0, f=1kHz VDS=10V, | Yfs | (small/la...