FC139

Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · High VEBO (VEBO≥15V) · Excellent in thermal equilibrium and pair capability. Electrical Connection Package Dimensions unit:mm 2067 [FC139] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit Conditions Ratings 60 50 15 100 200 20 200 300 150 –55 to +150 Unit V V V mA mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE hFE(small/ large) fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=40V, IE=0 VEB...