FC142

Ordering number:EN3477 FC142 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias resistance (R1=4.7kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC142 is formed with two chips, being equivalent to the 2SA1653, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection C1:Collector 1 C2:Collector 2 B2:Base 2 EC:Emitter Common B1:Base 1 SANYO:CP5 Package Dimensions unit:mm 2066 [FC142] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –6 –100 –200 200 300 150 –55 to +150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=–40V, IE=0 VCB=–40V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–10mA VCE=–5V, IC=5mA VCB=–10V, f=1MHz –50 –50 –0.7 –0.95 3.3 –0.85 ...