FC149

Ordering number:EN3964 FC149 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC149 is formed with two chips, being equivalent to the 2SA1813, placed in one package. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · High VEBO (VEBO≥15V). · Excellent in thermal equilibrium and pair capability. Electrical Connection Package Dimensions unit:mm 2067A [FC149] 1:Emitter 1 2:Base 1 3:Collector 2 4:Emitter 2 5:Base 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit Conditions Ratings –30 –25 –15 –150 –300 –30 200 300 150 –55 to +150 Unit V V V mA mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE hFE(small/ large) fT Cob VCE(sat) VBE(sat) VCB=–20V, IE=0 VEB=–10V, IE=0 VCE=–5V, IC=–1mA VCE...