FC150

Ordering number:EN3965 FC150 PNP/NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package. · Adoption of FBET process. · High DC current gain. · Hgih VEBO. Electrical Connection Package Dimensions unit:mm 2067 [FC150] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 TR1=PNP TR2=NPN Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit Conditions Ratings (–30)60 (–25)50 (–)15 (–150)100 (–300)200 (–30)20 200 300 150 –55 to +150 Unit V V V mA mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditons VCB=(–20V)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)5V, IC=(–)1mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz IC=(–)5...