FC801

Ordering number :EN3107A FC801 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC801 is formed with two chips, each being equivalent to the DCA015, placed in one package. Package Dimensions unit:mm 1232A [FC801] 1:Cathode 2:Cathode 3:Anode 4:Cathode 5:Cathode 6:Anode SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Surge Current Average Rectified Current Peak Forward Current Junction Temperature Storage Temperature Symbol VRM VR IFSM IO IFM Tj Tstg 1µs Conditions Ratings 75 50 4 100 300 150 –50 to +150 Unit V V A mA mA ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Symbol VF IF=10mA IF=50mA IF=100mA Reverse Current Intertermimal Capacitance Reverse Recovery Time IR C trr VR=50V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp 4.5 Conditions Ratings min typ 0.72 0.82 0.88 max 1.0 1.0 1.2 100 9.0 8.0 V V V nA pF ns Unit Note) The specifications shown above are for each individual diode. · Marking:801 Reverse Recovery Time Test Circuit Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/91694MO 8-4998/5169MO, TS No.3107-1/2 FC801 No products described or contained herein are intended for use in s...