DatasheetsPDF.com

FC805

Sanyo Semicon Device

30V/ 500mA Rectifier

Ordering number :EN3400B FC805 Silicon Schottky Barrier Diode 30V, 500mA Rectifier Features · Low forward voltage (VF ...



FC805

Sanyo Semicon Device


Octopart Stock #: O-210254

Findchips Stock #: 210254-F

Web ViewView FC805 Datasheet

File DownloadDownload FC805 PDF File







Description
Ordering number :EN3400B FC805 Silicon Schottky Barrier Diode 30V, 500mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC805 is formed with two chips, each being equivalent to the SB05–03C, placed in one package. Package Dimensions unit:mm 1236A [FC805] 1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50MHz sine wave, 1 cycle Conditions Ratings 30 35 500 5 –55 to +125 –55 to +125 Unit V V mA A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interteminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth (j-a) IR=150µA IF=500mA VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 560 Conditions Ratings min 30 0.55 30 16 10 typ max V V µA pF ns ˚C/W Unit · Marking:805 trr Test Circuit Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/O3196GI/8030MH, TA, TS No.3400-1/2 FC805 No products described or ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)