Ordering number :EN3401A
FC806
Silicon Schottky Barrier Diode
50V, 100mA Rectifier
Features
· Low forward voltage (VF ...
Ordering number :EN3401A
FC806
Silicon
Schottky Barrier Diode
50V, 100mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC806 is formed with two chips, each being equivalent to the SB01–05CP, placed in one package.
Package Dimensions
unit:mm 1236A
[FC806]
1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50MHz sine wave, 1 cycle Conditions Ratings 50 55 100 2 –55 to +125 –55 to +125 Unit V V mA A
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Reverse Voltage Forward Voltage Reverse Current Interteminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth (j-a) IR=50µA IF=100mA VR=25V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 560 Conditions Ratings min 50 0.55 15 4.4 10 typ max V V µA pF ns Unit
˚C/W
· Marking:806 trr Test Circuit
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/8030MH, TA, TS No.3401-1/2
FC806
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