SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998 FEATURES
FCX1051A
C
*
* * * *
2W POWER DISSIP...
SOT89
NPN SILICON POWER (SWITCHING)
TRANSISTOR
ISSSUE 1 - DECEMBER 1998 FEATURES
FCX1051A
C
*
* * * *
2W POWER DISSIPATION
10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 17mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 57mΩ at 3A FCX1151A 051
E C B
Complimentary Type Partmarking Detail -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 150 40 5 10 3 1 † 2 ‡ -55 to +150 UNIT V V V A A W W °C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components.
FCX1051A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current...