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FD1000FV-90

Mitsubishi Electric Semiconductor

Diode

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FV-90 OUTLIN...


Mitsubishi Electric Semiconductor

FD1000FV-90

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Description
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FV-90 OUTLINE DRAWING Dimensions in mm R4 15° 5 9 `'39 CATHODE φ 60 0.4 MIN q IF(AV) Average forward current ........................800A q VRRM Repetitive peak reverse voltage ....... 3500 ~ 4500V q QRR Reverse recovery charge ................. 1500µC q Press pack type φ 60 φ 102 MAX ANODE M5 ! 0.8 DEPTH 2.5 APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t Tj Tstg — — Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Junction temperature Storage temperature Mounting force required Weight 70 3500 3500 2800 Conditions f = 60Hz, sine wave θ = 180°, Tf = 88°C One half cycle at 60Hz, non-repetitive One cycle at 60Hz Voltage class 80 4000 4000 3200 90 4500 4500 3600 Ratings 1250 800 20 1.7 × 106 –40 ~ +125 –40 ~ +150 26.5 ~ 43.1 700 Unit V V V Unit A A kA A 2s °C °C kN g Recommended value 39.2 Standard value ELECTRICAL CHARACTERISTICS Symbol IRRM VFM QRR Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Thermal resistance Test conditions Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 2500A, Instantaneous measurement IFM = 800A, diF/dt = –3...




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