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FD1500AV-90

Mitsubishi Electric Semiconductor

Diode

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1500AV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1500AV-90 OUTLIN...


Mitsubishi Electric Semiconductor

FD1500AV-90

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Description
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1500AV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1500AV-90 OUTLINE DRAWING Dimensions in mm 9 6.3 15° ¶40 CATHODE φ 70 φ 3.5 DEPTH 2.2 ± 0.2 0.4 MIN φ 70 φ 120 MAX q IF(AV) Average forward current ......................1500A q VRRM Repetitive peak reverse voltage ....... 3500 ~ 4500V q QRR Reverse recovery charge ................. 2000µC q Press pack type ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t Tj Tstg — — Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Junction temperature Storage temperature Mounting force required Weight 70 3500 3500 2800 Conditions f = 60Hz, sine wave θ = 180°, Tf = 65°C One half cycle at 60Hz, non-repetitive One cycle at 60Hz Voltage class 80 4000 4000 3200 90 4500 4500 3600 Ratings 2350 1500 24 2.4 × 106 –40 ~ +125 –40 ~ +150 44.1 ~ 58.8 1270 Unit V V V Unit A A kA A 2s °C °C kN g Recommended value 49 Standard value ELECTRICAL CHARACTERISTICS Symbol IRRM VFM QRR Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Thermal resistance Test conditions Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 3400A, Instantaneous measurement IF...




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