DatasheetsPDF.com

FD2000DU-120

Powerex Power Semiconductors

HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 OUTL...


Powerex Power Semiconductors

FD2000DU-120

File Download Download FD2000DU-120 Datasheet


Description
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 OUTLINE DRAWING Dimension in mm φ 190 max CATHODE φ 130 ± 0.2 φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 0.4 min φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 q IF(AV) Average forward current .....................1700A q VRRM Repetitive peak reverse voltage ..........6000V q QRR Reverse recovery charge ................. 1500µC q Press pack type TYPE NAME ANODE φ 130 ± 0.2 φ 190 max APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t Tj Tstg — — Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Junction temperature Storage temperature Mounting force required Weight Conditions f = 60Hz, sine wave θ = 180°, Tf = 65°C One half cycle at 60Hz, non-repetitive One cycle at 60Hz Voltage class 120 6000 6000 4800 Ratings 2670 1700 40 6.7 × 106 –40 ~ +125 –40 ~ +150 98 ~ 118 4600 Unit V V V Unit A A kA A 2s °C °C kN g Recommended value 108 Standard value ELECTRICAL CHARACTERISTICS Symbol IRRM VFM QRR Rth(j-f) Parameter Test conditions Min — — — — Limits Typ — — — — Max 300 5.0 1500 0.009 Unit mA V µC °C/W Aug.1998 Repetitive peak reverse current Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 6300A, Instantaneous meas...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)