FDB2572

FDB2572 / FDP2572 September 2002 FDB2572 / FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82860 Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems DRAIN (FLANGE) GATE SOURCE D SOURCE DRAIN GATE DRAIN (FLANGE) G TO-220AB FDP SERIES TO-263AB FDB SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 29 20 4 Figure 4 36 135 0.9 -55 to 175 A A A A mJ W W/oC o Ratings 150 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 2 1.11 62 43 o o o C/W C/W C/W This product has be...