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FDB42AN15A0 Dataheets PDF



Part Number FDB42AN15A0
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDB42AN15A0 DatasheetFDB42AN15A0 Datasheet (PDF)

FDP42AN15A0 / FDB42AN15A0 September 2002 FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ Features • r DS(ON) = 36mΩ (Typ.), VGS = 10V, ID = 12A • Qg(tot) = 33nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82864 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Vo.

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FDP42AN15A0 / FDB42AN15A0 September 2002 FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ Features • r DS(ON) = 36mΩ (Typ.), VGS = 10V, ID = 12A • Qg(tot) = 33nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82864 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems DRAIN (FLANGE) GATE SOURCE DRAIN GATE DRAIN (FLANGE) D SOURCE G S TO-263AB FDB SERIES TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 35 24 5 Figure 4 90 150 1.00 -55 to 175 A A mJ W W/oC o Ratings 150 ±20 Units V V A C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 43 oC/W o o C/W C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 / FDB42AN15A0 Rev. C FDP42AN15A0 / FDB42AN15A0 Package Marking and Ordering Information Device Marking FDB42AN15A0 FDP42AN15A0 Device FDB42AN15A0 FDP42AN15A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V DS = 120V VGS = 0V VGS = ±20V TC = 150oC 150 1 250 ±100 V µA nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 12A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 6A, VGS = 6V ID = 12A, VGS = 10V, TJ = 175oC 2 0.036 0.040 0.090 4 0.042 0.060 0.107 Ω V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge V DS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 75V ID = 12A Ig = 1.0mA 2150 225 45 30 4.2 9.5 5.3 6.9 39 5.4 pF pF pF nC nC nC nC nC Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time V DD = 75V, ID = 12A VGS = 10V, RGS = 7.5Ω 11 19 27 23 46 74 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 12A ISD = 6A ISD = 12A, dISD/dt = 100A/µs ISD = 12A, dISD/dt = 100A/µs 1.25 1.0 82 204 V V ns nC Notes: 1: Starting TJ = 25°C, L = 0.2mH, IAS = 30A. ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 / FDB42AN15A0 Rev. C FDP42AN15A0 / FDB42AN15A0 Typical Characteristics TC = 25°C unless otherwise noted 1.2 40 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 30 0.8 0.6 20 0.4 10 0.2 0 TC , CASE TEMPERATURE (o C) 0 25 50 75 100 125 (oC) 150 175 TC, CASE TEMPERATURE Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature ZθJC, NORMALIZED THERMAL IMPEDANCE PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101 SINGLE PULSE 0.01 10-5 10-4 Figure 3. Normalized Maximum Transient Thermal Impedance 500 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 VGS = 10V 10 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101 Figure 4. Peak Current Capability ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 / FDB42AN15A0 Rev. C FDP42AN15A0 / FDB42AN15A0 Typical Characteristics TC = 25°C unless otherwise noted 200 100 10µs .


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