FDP6676S/FDB6676S
October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET™
General Description
This MOSFET...
FDP6676S/FDB6676S
October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET™
General Description
This MOSFET is designed to replace a single MOSFET and parallel
Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a
Schottky diode.
Features
38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
Includes SyncFET
Schottky body diode Low gate charge (40nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1) (Note 1)
Units
V V A W W/°C °C °C
76 150 70 0.56 –55 to +150 275
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Therm...