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FDC5614P Datasheet, Equivalent, PowerTrench MOSFET.

60V P-Channel Logic Level PowerTrench MOSFET

60V P-Channel Logic Level PowerTrench MOSFET

 

 

 

Part FDC5614P
Description 60V P-Channel Logic Level PowerTrench MOSFET
Feature FDC5614P February 2002 FDC5614P 60V P- Channel Logic Level PowerTrench MOSF ET General Description This 60V P-Chann el MOSFET uses Fairchild’s high volta ge PowerTrench process.
It has been opt imized for power management application s.
Features
• –3 A, –60 V.
RDS(O N) = 0.
105 Ω @ VGS = –10 V RDS(ON) = 0.
135 Ω @ VGS = –4.
5 V Applicati ons
• DC-DC converters
• Load switc h
• Power management
• Fast switch ing speed
• High performance trench t echnology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source V olt .
Manufacture Fairchild Semiconductor
Datasheet
Download FDC5614P Datasheet
Part FDC5614P
Description 60V P-Channel Logic Level PowerTrench MOSFET
Feature FDC5614P February 2002 FDC5614P 60V P- Channel Logic Level PowerTrench MOSF ET General Description This 60V P-Chann el MOSFET uses Fairchild’s high volta ge PowerTrench process.
It has been opt imized for power management application s.
Features
• –3 A, –60 V.
RDS(O N) = 0.
105 Ω @ VGS = –10 V RDS(ON) = 0.
135 Ω @ VGS = –4.
5 V Applicati ons
• DC-DC converters
• Load switc h
• Power management
• Fast switch ing speed
• High performance trench t echnology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source V olt .
Manufacture Fairchild Semiconductor
Datasheet
Download FDC5614P Datasheet

FDC5614P

FDC5614P
FDC5614P

FDC5614P

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