P-Channel 1.8V Specified PowerTrench MOSFET
FDC606P
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V spe...
Description
FDC606P
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
–6 A, –12 V. RDS(ON) = 26 mΩ @ VGS = –4.5 V RDS(ON) = 35 mΩ @ VGS = –2.5 V RDS(ON) = 53 mΩ @ VGS = –1.8 V
Applications
Battery management Load switch Battery protection
Fast switching speed High performance trench technology for extremely low RDS(ON)
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
–12 ±8
(Note 1a)
Units
V V A W °C
–6 –20 1.6 0.8 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking .606 Device FDC606P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
FDC606P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage D...
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