Document
April 1999
FDC6321C Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
Features
N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.0V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple dual NPN & PNP digital transistors.
SOT-23
SuperSOTTM-6 Mark:.321
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 S1 D1
4 3
G2
5
2
SuperSOT TM -6
S2 G1
6 1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
N-Channel P-Channel Units
VDSS, VCC VGSS, VIN ID, IO PD TJ,TSTG ESD
Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b)
25 8 0.68 2 0.9 0.7 -55 to 150 6
-25 -8 -0.46 -1.5
V V A
W
Operating and Storage Tempature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
°C kV
THERMAL CHARACTERISTICS
RθJA RθJC
(Note 1a) (Note 1)
140 60
°C/W °C/W
© 1999 Fairchild Semiconductor Corporation
FDC6321C.RevB
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions
Type
N-Ch P-Ch N-Ch P-Ch N-Ch TJ = 55°C
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID= 250 µA, Referenced to 25 oC ID = -250 µA, Referenced to 25 oC VDS= 20 V, VGS= 0 V, VDS =-20 V, VGS = 0 V, TJ = 55°C VGS = 8 V, VDS= 0 V VGS = -8 V, VDS= 0 V
25 -25 26 -22 1 10
V mV /oC µA
∆BVDSS/∆TJ
IDSS IDSS IGSS
Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current Gate - Body Leakage Current
P-Ch N-Ch P-Ch
-1 -10 100 -100
µA nA nA mV / oC
ON CHARACTERISTICS (Note 2)
∆VGS(th)/∆TJ
VGS(th) RDS(ON)
Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage
ID = 250 µA, Referenced to 25 o C ID= -250 µA, Referenced to 25 o C VDS = VGS, ID = 250 µA VDS = VGS, ID= -250 µA VGS = 4.5 V, ID = 0.5 A TJ =125°C VGS = 2.7 V, ID = 0.25A VGS = -4.5 V, ID = -0.5 A TJ =125°C VGS = -2.7 V, ID = -0.25 A
N-Ch P-Ch N-Ch P-Ch N-Ch 0.65 -0.65
-2.6 2.1 0.8 -0.86 0.33 0.51 0.44 1.5 -1.5 0.45 0.72 0.6 1.1 1.8 1.5
V
Static Drain-Source On-Resistance
Ω
P-Ch
0.87 1.21 1.22
ID(ON) gFS
On-State Drain Current Forward Transconductance
VGS.