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FDC6321C Dataheets PDF



Part Number FDC6321C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N & P Channel / Digital FET
Datasheet FDC6321C DatasheetFDC6321C Datasheet (PDF)

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required.

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April 1999 FDC6321C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors. Features N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.0V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple dual NPN & PNP digital transistors. SOT-23 SuperSOTTM-6 Mark:.321 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 S1 D1 4 3 G2 5 2 SuperSOT TM -6 S2 G1 6 1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted N-Channel P-Channel Units VDSS, VCC VGSS, VIN ID, IO PD TJ,TSTG ESD Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) 25 8 0.68 2 0.9 0.7 -55 to 150 6 -25 -8 -0.46 -1.5 V V A W Operating and Storage Tempature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case °C kV THERMAL CHARACTERISTICS RθJA RθJC (Note 1a) (Note 1) 140 60 °C/W °C/W © 1999 Fairchild Semiconductor Corporation FDC6321C.RevB Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type N-Ch P-Ch N-Ch P-Ch N-Ch TJ = 55°C Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID= 250 µA, Referenced to 25 oC ID = -250 µA, Referenced to 25 oC VDS= 20 V, VGS= 0 V, VDS =-20 V, VGS = 0 V, TJ = 55°C VGS = 8 V, VDS= 0 V VGS = -8 V, VDS= 0 V 25 -25 26 -22 1 10 V mV /oC µA ∆BVDSS/∆TJ IDSS IDSS IGSS Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate - Body Leakage Current P-Ch N-Ch P-Ch -1 -10 100 -100 µA nA nA mV / oC ON CHARACTERISTICS (Note 2) ∆VGS(th)/∆TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage ID = 250 µA, Referenced to 25 o C ID= -250 µA, Referenced to 25 o C VDS = VGS, ID = 250 µA VDS = VGS, ID= -250 µA VGS = 4.5 V, ID = 0.5 A TJ =125°C VGS = 2.7 V, ID = 0.25A VGS = -4.5 V, ID = -0.5 A TJ =125°C VGS = -2.7 V, ID = -0.25 A N-Ch P-Ch N-Ch P-Ch N-Ch 0.65 -0.65 -2.6 2.1 0.8 -0.86 0.33 0.51 0.44 1.5 -1.5 0.45 0.72 0.6 1.1 1.8 1.5 V Static Drain-Source On-Resistance Ω P-Ch 0.87 1.21 1.22 ID(ON) gFS On-State Drain Current Forward Transconductance VGS.


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