Dual N & P-Channel 2.5V MOSFET
FDC6327C
July 2000
FDC6327C
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N & P-Cha...
Description
FDC6327C
July 2000
FDC6327C
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on)= 0.25Ω @ VGS = -2.5V Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
Applications DC/DC converter Load switch Motor driving
D2 S1 D1
4
3
5
2
G2
SuperSOT
TM
-6
S2 G1
TA = 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
Parameter
N-Channel
20
(Note 1a)
P-Channel
-20 ±8 -1.9 -8 0.96 0.9 0.7
Units
V V A W
±8 2.7 8
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg RθJA RθJC
Operating and Storage Junction Temperature Range
-55 to +150
°C °C/W °C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Amb...
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