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FDC637AN Dataheets PDF



Part Number FDC637AN
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDC637AN DatasheetFDC637AN Datasheet (PDF)

FDC637AN November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. .

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FDC637AN November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Features • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V • • • • Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • • • DC/DC converter Load switch Battery Protection D D S 1 6 2 5 SuperSOT TM -6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter FDC637AN 20 ±8 (Note 1a) Units V V A W °C 6.2 20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Outlines and Ordering Information Device Marking .637 Device FDC637AN Reel Size 7’’ Tape Width 8mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation FDC637AN, Rev. C FDC637AN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 µ A ID = 250µ A, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward 20 14 1 100 -100 V mV/°C µA nA nA Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V (Note 2) On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µ A ID =250µ A,Referenced to 125°C VGS = 4.5 V,ID = 6.2 A VGS = 4.5 V,ID = 6.2 A,TJ=125°C VGS = 2.5 V, ID = 5.2 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 6.2 A 0.4 0.82 -3 0.019 0.028 0.025 1.5 V mV/°C 0.024 0.041 0.032 Ω ID(on) gFS 10 7.4 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, VGS = 0 V, f = 1.0 MHz 1125 290 145 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 9 13 26 11 18 24 42 20 16 ns ns ns ns nC nC nC VDS = 5 V, ID = 6.2 A, VGS = 4.5 V 10.5 1.5 2.2 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 1.3 0.7 1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC637AN, Rev. C FDC637AN Typical Characteristics 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 VGS= 4.5V ID, DRAIN CURRENT (A) 16 3.0V 2.5V 2.0V 2 12 1.5 VGS= 2.0V 2.5V 3.0V 8 1 4.5V 4 1.5V 0 0 0.4 0.8 1.2 1.6 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 0.08 RDS(ON), ON RESISTANCE (OHM) ID= 6.2A VGS= 4.5V ID= 6.2A 0.06 0.04 TJ= 125 C 25 C 0.02 o o 0 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 VDS= 5V ID, DRAIN CURRENT (A) 15 25 C o 100 125 C o IS, REVERSE DRAIN CURRENT (A) TJ= -55 C o VGS = 0 10 1 0.1 0.01 0.001 0.0001 TJ= 125 C 25 C -55 C o o o 10 5 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with.


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