Document
FDC637AN
November 1999
FDC637AN
Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
Features •
6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V
• • • •
Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications • • •
DC/DC converter Load switch Battery Protection
D
D
S
1
6
2
5
SuperSOT TM -6
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
FDC637AN
20 ±8
(Note 1a)
Units
V V A W °C
6.2 20 1.6 0.8 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
.637
Device
FDC637AN
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC637AN, Rev. C
FDC637AN
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
VGS = 0 V, ID = 250 µ A ID = 250µ A, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward 20 14 1 100 -100 V mV/°C µA nA nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
(Note 2)
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µ A ID =250µ A,Referenced to 125°C VGS = 4.5 V,ID = 6.2 A VGS = 4.5 V,ID = 6.2 A,TJ=125°C VGS = 2.5 V, ID = 5.2 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 6.2 A
0.4
0.82 -3 0.019 0.028 0.025
1.5
V mV/°C
0.024 0.041 0.032
Ω
ID(on) gFS
10 7.4
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
1125 290 145
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
9 13 26 11
18 24 42 20 16
ns ns ns ns nC nC nC
VDS = 5 V, ID = 6.2 A, VGS = 4.5 V
10.5 1.5 2.2
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
1.3 0.7 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDC637AN, Rev. C
FDC637AN
Typical Characteristics
20
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5
VGS= 4.5V ID, DRAIN CURRENT (A) 16 3.0V
2.5V 2.0V
2
12
1.5
VGS= 2.0V 2.5V 3.0V
8
1
4.5V
4
1.5V
0 0 0.4 0.8 1.2 1.6 2 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 5 10 ID, DRAIN CURRENT (A) 15 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50
0.08 RDS(ON), ON RESISTANCE (OHM) ID= 6.2A VGS= 4.5V ID= 6.2A 0.06
0.04 TJ= 125 C 25 C 0.02
o o
0 -25 0 25 50 75 100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
20 VDS= 5V ID, DRAIN CURRENT (A) 15 25 C
o
100
125 C
o
IS, REVERSE DRAIN CURRENT (A)
TJ= -55 C
o
VGS = 0 10 1 0.1 0.01 0.001 0.0001
TJ= 125 C 25 C -55 C
o o
o
10
5
0 0.5 1 1.5 2 2.5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with.