Document
June 1999
FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-4.5 A, -20 V. R DS(ON) = 0.045
R DS(ON) = 0.065
Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V.
Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
TM
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
.63
pin 1
8
2
G D D
5
SuperSOT
TM
-6
3
4
Absolute Maximum Ratings Symbol Parameter
VDSS VGSS ID Drain-Source Voltage
TA = 25°C unless otherwise note
Ratings
-20 ±8
(Note 1a)
Units
V V A
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed
-4.5 -20
PD
Maximum Power Dissipation
(Note 1a) (Note 1b)
1.6 0.8 -55 to 150
W
TJ ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R θ JA R θ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
©1999 Fairchild Semiconductor
FDC638P Rev.D
ELECTRICAL CHARACTERISTICS Symbol Parameter
(TA = 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA I D = -250 µA, Referenced to 25 C VDS = -16 V, VGS = 0 V TJ = 55 C I GSSF I GSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2) o o
-20 -18 -1 -10 100 -100
V mV/ C µA µA nA nA
o
∆BVDSS/ ∆TJ
I DSS
VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance
VDS = VGS , I D = -250 µA I D = -250 µA, Referenced to 25 C VGS = -4.5 V, I D = -4.5 A TJ = 125 C VGS = -2.5 V, I D = -3.8 A
o o
-0.4
-0.9 3 0.039 0.054 0.057
-1.5
V mV/ C
o
∆VGS(th)/ ∆TJ
R DS(ON)
0.045 0.072 0.065
Ω
I D(on) gFS
On-State Drain Current Forward Transconductance
VGS = -4.5 V, VDS = -5 V VDS = -10 V, I D = -4.5 A
-20 6.5
A S
DYNAMIC CHARACTERISTICS
C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 1240 270 100 pF pF pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on) tr t D(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, I D = -4.5 A, VGS = -5 V VDD = -5 V, I D = -1 A, VGS = -4.5 V, R GEN = 6 Ω 8 15 45 30 13 1.8 3 16 27 65 50 19 ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS VSD
Notes: 1. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. a. 78oC/W when mounted on a 1 in 2 pad of 2oz Cu on FR-4 board. b. 156oC/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Continuous Source Diode Current Drain-Source Diode Forward Voltage VGS = 0 V, I S = -1.3 A
(Note 2)
-1.3 -0.75 -1.2
A V
FDC638P Rev.D
Typical Electrical Characteristics
20 - ID , DRAIN-SOURCE CURRENT (A) 1.6
-3.0V
RDS(ON) , NORMALIZED 16
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V - 2.5V
VGS = -2.5V
1.4
12
-3.0V
1.2
-3.5V -4.0V -4.5V
8
- 2.0V
1
4
0 0 1 2 3 4 5 -VDS , DRAIN-SOURCE VOLTAGE (V)
0.8 0 5 10 -I D , DRAIN CURRENT (A) 15 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage .
1.6 DRAIN-SOURCE ON-RESISTANCE
0.15
R DS(ON) , NORMALIZED
1.4
I D = -4.5A V GS = -4.5V
RDS(ON) , ON-RESISTANCE (OHM)
I D = -2.0A
0.12
1.2
0.09
1
0.06
A = 125°C T
0.8
0.03
25°C
0.6 -50
-25
0
25
50
75
100
125
150
0 1 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On Resistance Variation with Gate-to-Source Voltage.
20
VDS = -5V
- I D , DRAIN CURRENT (A) 16
T J = -55°C
25°C 125°C
- I , REVERSE DRAIN CURRENT (A)
20 10
VGS = 0V T J = 125°C
1
12
25°C -55°C
0.1
8
4
0.01
0 0 0.8 1.6 2.4 3.2 4 -VGS , GATE TO SOURCE VOLTAGE (V)
S
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5.Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC638P Rev.B
Typical Electrical Characteristics
5 -VGS , GATE-SOURCE VOLTAGE (V)
2500 I D = -4.5A VD S = -5V -10V -15V
4
C iss
CA.