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FDC638P Dataheets PDF



Part Number FDC638P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel MOSFET
Datasheet FDC638P DatasheetFDC638P Datasheet (PDF)

June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A,.

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June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 pin 1 8 2 G D D 5 SuperSOT TM -6 3 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain-Source Voltage TA = 25°C unless otherwise note Ratings -20 ±8 (Note 1a) Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed -4.5 -20 PD Maximum Power Dissipation (Note 1a) (Note 1b) 1.6 0.8 -55 to 150 W TJ ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS R θ JA R θ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W ©1999 Fairchild Semiconductor FDC638P Rev.D ELECTRICAL CHARACTERISTICS Symbol Parameter (TA = 25°C unless otherwise noted) Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA I D = -250 µA, Referenced to 25 C VDS = -16 V, VGS = 0 V TJ = 55 C I GSSF I GSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o o -20 -18 -1 -10 100 -100 V mV/ C µA µA nA nA o ∆BVDSS/ ∆TJ I DSS VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance VDS = VGS , I D = -250 µA I D = -250 µA, Referenced to 25 C VGS = -4.5 V, I D = -4.5 A TJ = 125 C VGS = -2.5 V, I D = -3.8 A o o -0.4 -0.9 3 0.039 0.054 0.057 -1.5 V mV/ C o ∆VGS(th)/ ∆TJ R DS(ON) 0.045 0.072 0.065 Ω I D(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -10 V, I D = -4.5 A -20 6.5 A S DYNAMIC CHARACTERISTICS C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 1240 270 100 pF pF pF SWITCHING CHARACTERISTICS (Note 2) t D(on) tr t D(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, I D = -4.5 A, VGS = -5 V VDD = -5 V, I D = -1 A, VGS = -4.5 V, R GEN = 6 Ω 8 15 45 30 13 1.8 3 16 27 65 50 19 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Notes: 1. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. a. 78oC/W when mounted on a 1 in 2 pad of 2oz Cu on FR-4 board. b. 156oC/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Continuous Source Diode Current Drain-Source Diode Forward Voltage VGS = 0 V, I S = -1.3 A (Note 2) -1.3 -0.75 -1.2 A V FDC638P Rev.D Typical Electrical Characteristics 20 - ID , DRAIN-SOURCE CURRENT (A) 1.6 -3.0V RDS(ON) , NORMALIZED 16 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V - 2.5V VGS = -2.5V 1.4 12 -3.0V 1.2 -3.5V -4.0V -4.5V 8 - 2.0V 1 4 0 0 1 2 3 4 5 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 -I D , DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage . 1.6 DRAIN-SOURCE ON-RESISTANCE 0.15 R DS(ON) , NORMALIZED 1.4 I D = -4.5A V GS = -4.5V RDS(ON) , ON-RESISTANCE (OHM) I D = -2.0A 0.12 1.2 0.09 1 0.06 A = 125°C T 0.8 0.03 25°C 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-to-Source Voltage. 20 VDS = -5V - I D , DRAIN CURRENT (A) 16 T J = -55°C 25°C 125°C - I , REVERSE DRAIN CURRENT (A) 20 10 VGS = 0V T J = 125°C 1 12 25°C -55°C 0.1 8 4 0.01 0 0 0.8 1.6 2.4 3.2 4 -VGS , GATE TO SOURCE VOLTAGE (V) S 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5.Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC638P Rev.B Typical Electrical Characteristics 5 -VGS , GATE-SOURCE VOLTAGE (V) 2500 I D = -4.5A VD S = -5V -10V -15V 4 C iss CA.


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