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FDC640P Dataheets PDF



Part Number FDC640P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel MOSFET
Datasheet FDC640P DatasheetFDC640P Datasheet (PDF)

FDC640P August 2000 FDC640P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages. Features • -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V • • • Rugged gate rating (±12V). High performance trench technology for extreme.

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FDC640P August 2000 FDC640P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages. Features • -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V • • • Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1a) Units V V A W °C ±12 -4.5 -20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Outlines and Ordering Information Device Marking .640 2000 Fairchild Semiconductor International Device FDC640P Reel Size 7’’ Tape Width 8mm Quantity 3000 units FDC640P, Rev.C FDC640P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V, VDS = 0 V Min -20 Typ Max Units V Off Characteristics -17 -1 100 -100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -4.5 A VGS = -4.5V, ID = -4.5A, TJ=125°C VGS = -2.5 V, ID = -3.6 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4.5 A -0.6 -1 3 0.037 0.054 0.060 -1.5 V mV/°C 0.05 0.08 0.077 Ω ID(on) gFS -10 13 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -25 V, VGS = 0 V, f = 1.0 MHz 1065 270 105 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 8.5 10 55 25 17 18 90 40 14 ns ns ns ns nC nC nC VDS = -10 V, ID = -4.5 A, VGS = -4.5 V, 10 2.1 2.9 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -1.3 -0.75 -1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC640P, Rev.C FDC640P Typical Characteristics 20 VGS = -4.5V -4.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V -3.0V -ID, DRAIN CURRENT (A) 1.8 VGS = -2.5V 1.6 1.4 1.2 1 0.8 0 5 10 -ID , DRAIN CURRENT (A) 15 20 15 -2.5V 10 -3.0V -3.5V -4.0V -4.5V 5 -2.0V 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.14 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 ID = -4.5A VGS = -4.5V ID = -2.3A 0.12 0.1 0.08 0.06 0.04 0.02 0 TA = 25oC TA = 125oC -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 TA = -55oC 25 C 125oC o 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25 C -55oC o -ID, DRAIN CURRENT (A) 16 12 8 4 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC640P, Rev.C FDC640P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.5A 4 (continued.


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