Document
FDC640P
August 2000
FDC640P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages.
Features •
-4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V
• • •
Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications • Load switch • Battery protection • Power management
D D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1a)
Units
V V A W °C
±12 -4.5 -20 1.6 0.8 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
.640
2000 Fairchild Semiconductor International
Device
FDC640P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDC640P, Rev.C
FDC640P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V, VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-17 -1 100 -100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -4.5 A VGS = -4.5V, ID = -4.5A, TJ=125°C VGS = -2.5 V, ID = -3.6 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4.5 A
-0.6
-1 3 0.037 0.054 0.060
-1.5
V mV/°C
0.05 0.08 0.077
Ω
ID(on) gFS
-10 13
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -25 V, VGS = 0 V, f = 1.0 MHz
1065 270 105
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω
8.5 10 55 25
17 18 90 40 14
ns ns ns ns nC nC nC
VDS = -10 V, ID = -4.5 A, VGS = -4.5 V,
10 2.1 2.9
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-1.3 -0.75 -1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDC640P, Rev.C
FDC640P
Typical Characteristics
20
VGS = -4.5V -4.0V
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-3.5V -3.0V
-ID, DRAIN CURRENT (A)
1.8 VGS = -2.5V 1.6 1.4 1.2 1 0.8 0 5 10 -ID , DRAIN CURRENT (A) 15 20
15 -2.5V 10
-3.0V -3.5V -4.0V -4.5V
5 -2.0V
0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
0.14
1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50
ID = -4.5A VGS = -4.5V
ID = -2.3A 0.12 0.1 0.08 0.06 0.04 0.02 0 TA = 25oC
TA = 125oC
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
20 TA = -55oC 25 C 125oC
o
100 -IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25 C -55oC
o
-ID, DRAIN CURRENT (A)
16
12
8
4
0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC640P, Rev.C
FDC640P
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.5A 4
(continued.