| DatasheetsPDF.com |
FDC642 Datasheet, Equivalent, Specified PowerTrenchMOSFET.P-Channel 2.5V Specified PowerTrenchMOSFET P-Channel 2.5V Specified PowerTrenchMOSFET |
| Part | FDC642 |
|---|---|
| Description | P-Channel 2.5V Specified PowerTrenchMOSFET |
| Feature | FDC642P
July 1999
FDC642P
P-Channel 2. 5V Specified PowerTrenchTM MOSFET Gener al Description This P-Channel 2. 5V spec ified MOSFET is produced using Fairchil d's advanced PowerTrench process that h as been especially tailored to minimize on-state resistance and yet maintain l ow gate charge for superior switching p erformance. These devices have been des igned to offer exceptional power dissip ation in a very small footprint for app lications where the larger packages are impractical. Features -4 A, -20 V. RDS(ON) = 0. 065 Ω @ VGS = -4. 5 V RDS(ON) = 0. 100 Ω @ VGS = -2 . 5 V Fast switching spe . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | FDC642 |
|---|---|
| Description | P-Channel 2.5V Specified PowerTrenchMOSFET |
| Feature | FDC642P
July 1999
FDC642P
P-Channel 2. 5V Specified PowerTrenchTM MOSFET Gener al Description This P-Channel 2. 5V spec ified MOSFET is produced using Fairchil d's advanced PowerTrench process that h as been especially tailored to minimize on-state resistance and yet maintain l ow gate charge for superior switching p erformance. These devices have been des igned to offer exceptional power dissip ation in a very small footprint for app lications where the larger packages are impractical. Features -4 A, -20 V. RDS(ON) = 0. 065 Ω @ VGS = -4. 5 V RDS(ON) = 0. 100 Ω @ VGS = -2 . 5 V Fast switching spe . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |