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FDC642P Dataheets PDF



Part Number FDC642P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel MOSFET
Datasheet FDC642P DatasheetFDC642P Datasheet (PDF)

FDC642P July 1999 FDC642P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Features • • • •.

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FDC642P July 1999 FDC642P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Features • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1) (Note 1a) (Note 1a) (Note 1b) Units V V A W °C ±8 -4 -20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Outlines and Ordering Information Device Marking .642 Device FDC642P Reel Size 7’’ Tape Width 8mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation FDC642P, Rev. B FDC642P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min -20 Typ Max Units V Off Characteristics -16 -1 100 -100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -4 A VGS = -4.5 V, ID = -4 A, TJ=125°C VGS = -2.5 V, ID = -3.2 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4 A -0.4 -0.7 2.5 0.054 0.076 0.077 -1.5 V mV/°C 0.065 0.105 0.100 Ω ID(on) gFS -10 9 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V f = 1.0 MHz 640 180 90 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 11 19 26 35 20 30 42 55 10 ns ns ns ns nC nC nC VDS = -10 V, ID = -4 A VGS = -4.5 V, 7.2 1.7 1.6 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -1.3 -0.75 -1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC642P, Rev. B FDC642P Typical Characteristics 20 -3.5V -3.0V -2.5V 1.6 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN-SOURCE CURRENT (A) VGS = -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 10 -2.0V 5 -1.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), NORMALIZED 15 0.8 0 4 8 12 16 20 - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.25 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 ID = - 4A VGS = - 4.5V ID = -2A 0.2 0.15 0.1 TA = 125oC 0.05 TA = 25oC 0 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 25oC 125oC 6 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V TA = -55oC VGS = 0V 10 -ID, DRAIN CURRENT (A) 8 1 T = 125oC 25oC 4 0.1 -55oC 2 0.01 0 0.4 0.8 1.2 1.6 2 2.4 -VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristi.


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