Document
FDC642P
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Features
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications Load switch Battery protection Power management
D D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1) (Note 1a) (Note 1a) (Note 1b)
Units
V V A W °C
±8 -4 -20 1.6 0.8 -55 to +150
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
.642
Device
FDC642P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC642P, Rev. B
FDC642P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-16 -1 100 -100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -4 A VGS = -4.5 V, ID = -4 A, TJ=125°C VGS = -2.5 V, ID = -3.2 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4 A
-0.4
-0.7 2.5 0.054 0.076 0.077
-1.5
V mV/°C
0.065 0.105 0.100
Ω
ID(on) gFS
-10 9
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V f = 1.0 MHz
640 180 90
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω
11 19 26 35
20 30 42 55 10
ns ns ns ns nC nC nC
VDS = -10 V, ID = -4 A VGS = -4.5 V,
7.2 1.7 1.6
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-1.3 -0.75 -1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDC642P, Rev. B
FDC642P
Typical Characteristics
20 -3.5V -3.0V -2.5V
1.6 DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-ID, DRAIN-SOURCE CURRENT (A)
VGS = -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1
10 -2.0V 5 -1.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V)
RDS(ON), NORMALIZED
15
0.8 0 4 8 12 16 20 - ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
0.25
1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50
ID = - 4A VGS = - 4.5V
ID = -2A 0.2
0.15
0.1 TA = 125oC 0.05 TA = 25oC
0
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 25oC 125oC 6
100 -IS, REVERSE DRAIN CURRENT (A)
VDS = -5V TA = -55oC
VGS = 0V 10
-ID, DRAIN CURRENT (A)
8
1
T = 125oC 25oC
4
0.1
-55oC
2
0.01
0 0.4 0.8 1.2 1.6 2 2.4 -VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristi.