FDC6506P Datasheet PDF
Posted Mar 30, 2005 (Stock #: 210559)
FDC6506P
February 1999
FDC6506P
Dual P-Channel Logic Level PowerTrench™ MOSFET
General Description
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Thes
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e devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features •
-1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V
• • • •
Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications • Load switch • Battery protection • Power management
D2 S1 D1
4
3
5
2
G2
SuperSOT
TM
-6
S2 G1
TA = 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
-30
(Note 1a)
Units
V V A W
±20 -1.8 -10 0.96 0.9 0.7 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
°C/W °C/W
Package Outlines and Ordering Information
Device Marking .506
©1999 Fairchild Semiconductor Corporation
Device
FDC6506P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDC6506P Rev. C
FDC6506P
Electrical Characteristics
Symbol Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
-30
Typ
Max Units
V
-20 -1 100 -100
mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -10 V, ID = -1.8 A VGS = -10 V, ID = -1.8 A @125°C VGS = -4.5 V, ID = -1.4 A VGS = -10 V, VDS = - 5 V VDS = -5 V, ID = -1.8 A
-1
-1.8 4 0.14 0.20 0.22
-3
V mV/°C
0.17 0.27 0.28
Ω
ID(on) gFS
-10 3
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -15 V, VGS = 0 V, f = 1.0
Similar Datasheet
- FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET - Fairchild Semiconductor
- FDC6506P Dual P-Channel MOSFET - ON Semiconductor