DatasheetsPDF.com

FDC6506P Datasheet PDF

Fairchild Semiconductor

Posted Mar 30, 2005 (Stock #: 210559)



Part Number FDC6506P
Manufacturers Fairchild Semiconductor
Description Dual P-Channel Logic Level PowerTrench MOSFET
Datasheet Web ViewView FDC6506P Datasheet
Download File DownloadFDC6506P PDF File
FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Thes
More View e devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V • • • • Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D2 S1 D1 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -30 (Note 1a) Units V V A W ±20 -1.8 -10 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W Package Outlines and Ordering Information Device Marking .506 ©1999 Fairchild Semiconductor Corporation Device FDC6506P Reel Size 7’’ Tape Width 8mm Quantity 3000 units FDC6506P Rev. C FDC6506P Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min -30 Typ Max Units V -20 -1 100 -100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -10 V, ID = -1.8 A VGS = -10 V, ID = -1.8 A @125°C VGS = -4.5 V, ID = -1.4 A VGS = -10 V, VDS = - 5 V VDS = -5 V, ID = -1.8 A -1 -1.8 4 0.14 0.20 0.22 -3 V mV/°C 0.17 0.27 0.28 Ω ID(on) gFS -10 3 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, VGS = 0 V, f = 1.0
  FDC6506P   FDC6506P





Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)