FDD3682

FDD3682 FDD3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82755 March 2015 Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection System 42V Automotive Load Control Electronic Valve Train System DRAIN (FLANGE) GATE G SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area D S Ratings 100 ±20 32 23 5.5 Figure 4 55 95 0.63 -55 to 175 1.58 100 52 Units V V A A A A mJ W W/oC oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy ...