FDD5614P

FDD5614P February 2001 FDD5614P 60V P-Channel PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V RDS(ON) = 130 mΩ @ VGS = –4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter Power management Load switch S D G S TO-252 D G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W –15 –45 42 3.8 1.6 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 3.5 40 96 °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD5614P Device FDD5614P Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDD5614P Rev C(W) FDD5614P Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Curren...