60V N-Channel PowerTrench MOSFET
FDD5690
June 1999 PRELIMINARY
FDD5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has...
Description
FDD5690
June 1999 PRELIMINARY
FDD5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
D
D G S
TO-252 Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed
(Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a)
G
S
T C =25 C unless otherwise noted
o
Parameter
Ratings
60 ± 20 30 9 100 50 3.2 1.3 -55 to +150
Units
V V A
Maximum Power Dissipation @ T C = 25 o C T A = 25 o C T A = 25 o C
W
T J, T stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R θJC R θJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient
(Note 1) (Note 1a) (Note 1b)
2.5 40 96
° C/W ° C/W ° C/W
Package Marking and Ordering Information
Device Marking FDD5690 Device FDD5690 Reel Size 13’’ Tape width ...
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