N-Channel MOSFET
FDD6030L
March 2015
FDD6030L
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced ...
Description
FDD6030L
March 2015
FDD6030L
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Applications
DC/DC converter Motor Drives
Features
12 A, 30 V
RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30 ±20 50 12 100 56 3.2 1.5 –55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.7
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
45
RθJA
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6030L
FDD6030L
D-PAK (TO-252)
Reel Size 13’’
Tape width 16mm
Units
V V A
W
°C
°C/W
Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDD6030L Rev. 2.3
FDD6030L
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwi...
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