FDD6030L

FDD6030L March 2015 FDD6030L 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Motor Drives Features 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V Low gate charge Fast Switching Speed High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range Ratings 30 ±20 50 12 100 56 3.2 1.5 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 RθJA (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package FDD6030L FDD6030L D-PAK (TO-252) Reel Size 13’’ Tape width 16mm Units V V A W °C °C/W Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDD6030L Rev. 2.3 FDD6030L Electrical Characteristics Symbol Parameter TA = 25°C unless otherwi...