Document
FDD603AL
July 1999
FDD603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V.
Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RDS(ON) .
Applications
DC/DC converters Motor drives
D
D G S
TO-252
Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current PD T A = 25 ° C -Pulsed T A = 25 o C T A = 25 o C T J, T stg
(Note 1) (Note 1a) T C =25 oC unless otherwise noted
G
S
Parameter
Ratings
30 ± 20 33 9.5 80
(Note 1) (Note 1a) (Note 1b)
Units
V V A
Maximum Power Dissipation @ T C = 25 o C
39 3.2 1.3 -55 to +150
W
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R θJC R θJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.5 40 96
° C/W ° C/W ° C/W
Package Marking and Ordering Information
Device Marking FDD603AL
1999 Fairchild Semiconductor Corporation
Device FDD603AL
Reel Size 13’’
Tape W idth 16mm
Quantity 2500
FDD603AL, Rev. B
FDD603AL
Electrical Characteristics
Symbol
W DSS IAR BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
100 12 mJ A V mV/°C 10 100 -100 µA nA nA
Off Characteristics
Single Pulse Drain-Source VDD = 15 V, ID = 12 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
30 32
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 9.5 A VGS = 10 V, ID = 9.5 A,TJ=125°C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 9.5 A
1
1.7 -4.5 0.016 0.024 0.026
3
V mV/°C
0.023 0.035 0.037
Ω
ID(on) gFS
60 18
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V f = 1.0 MHz
670 345 95
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω
10 16 27 12
20 30 45 22 26
ns ns ns ns nC nC nC
VDS =10 V, ID = 9.5 A VGS = 10 V,
19 3.5 5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
( Note 1) (Note 2)
33 0.78 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJC has been used to determine some maximum ratings.
a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD603AL, Rev. B
FDD603AL
Typical Characteristics
80 I D , DRAIN-SOURCE CURRENT (A)
3
GS
RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V
=10V
8.0 7.0 6.0
V
2.5
GS
= 4.0V 4.5
60
5.0
40
2
5.0 6.0 7.0 8.0 10
4.5
20
1.5
4.0 3.0
1
0 0 1 V
DS
0.5
2
3
4
5
0
20
40 I D , DRAIN CURRENT (A)
60
80
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.1
R DS(ON) , ON-RESISTANCE (OHM)
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
R DS(ON) , NORMALIZED
I D = 9.5A V GS = 10V
I D = 5A
0.08
0.06
0.04
TJ = 125°C
0.02
25°C
0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10
-25
0
25
50
75
100
125
150
T J, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
30
I S , REVERSE DRAIN CURRENT.