FDD6630A

FDD6630A July 1999 ADVANCE INFORMATION FDD6630A N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • • 21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.050 Ω @ VGS = 4.5 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications • • DC/DC converter Motor drives D D G G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) T C =25 oC unless otherwise noted S Parameter Ratings 30 ± 20 21 7.6 100 28 3.2 1.3 -55 to +150 Units V V A Maximum Power Dissipation @ T C = 25 o C T A = 25 o C T A = 25 o C W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics R θJC R θJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1a) (Note 1b) 4.5 40 96 ° C/W ° C/W ° C/W Package Marking and Ordering Information Device Marking FDD6630A 1999 Fairchild Semiconductor Corporation Device FDD6630A Reel Size 13’’ Tape W idth 16m m Quantity 2500 FDD6630A Rev. A FDD6630A Electrical Characteristics Symbol Parameter TC=25oC unless ot...