FDD6632

FDD6632 June 2002 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317 Features Fast switching rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A Qg(TOT) (Typ) = 2.6nC, VGS = 5V Qgd (Typ) = 0.8nC CISS (Typ) = 255pF Applications DC/DC converters D D G S G D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, Rθ JA = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 9 6 4 Figure 4 15 0.1 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 10 100 52 o o C/W C/W oC/W Package Marking and Ordering Information Device Marking FDD6632 Device FDD6632 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 250...