FDD6672A

FDD6672A May 2000 PRELIMINARY FDD6672A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) Low gate charge (33 nC typical) High power and current handling capability Applications DC/DC converter D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA =25 oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 65 100 70 3.2 1.3 -55 to +150 Maximum Power Dissipation @ TC = 25 °C @ TA = 25° C @ TA = 25° C (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJ A Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 1.8 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD6672A Device FDD6672A Reel Size 13’’ Tape width 16mm Quantity 2500 units © 2000 Fairchild Semiconductor Corporation FDD6672A Rev B(W) FDD6672A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR T A = 25°C unless otherwise noted Para...