FDD6680

FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V Low gate charge Fast Switching Speed High performance trench technology for extremely low RDS(ON) Applications DC/DC converter Motor Drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Units V V A Continuous Drain Current @TC=25°C @TA=25°C Pulsed 46 12 100 56 3.3 1.5 –55 to +175 PD Power Dissipation @TC=25°C @TA=25°C @TA=25°C W TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.7 45 96 °C/W Package Marking and Ordering Information Device Marking FDD6680 FDU6680 Device FDD6680 FDU6680 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 ©2004 Fairchild Semiconductor Corporation FDD6680/FDU6680 Rev. C1(W) FDD6680/FDU6680...