FDD6680S

FDD6680S December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode. Features 55 A, 30 V RDS(ON) = 11 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (17nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability . Applications DC/DC converter Motor Drives D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W 55 100 60 3.1 1.3 –55 to +150 TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.1 40 96 °C/W °C/W °C/W Packa...