FDD6696

FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V Low gate charge (17nC typical) Fast switching High performance trench technology for extremely low RDS(ON) Applications DC/DC converter Motor drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S T A=25oC unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 ± 16 50 13 100 52 3.8 1.6 –55 to +175 Unit s V A PD Power Dissipation @TC=25°C @TA =25°C @TA =25°C W TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.9 40 96 °C/W Package Marking and Ordering Information Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 © 2002 Fai...