PowerTrench MOSFET. FDD7030 Datasheet

FDD7030 Datasheet PDF, Equivalent


Part Number

FDD7030

Description

30V N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDD7030 Datasheet PDF


FDD7030 Datasheet
June 2003
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Motor Drives
Features
56 A, 30 V
RDS(ON) = 9.5 m@ VGS = 10 V
RDS(ON) = 13 m@ VGS = 4.5 V
Low gate charge
Fast Switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
56
14
100
60
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
(Note 1a)
(Note 1b)
2.5
45
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD7030BL
FDD7030BL
D-PAK (TO-252)
FDU7030BL
FDU7030BL
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
75
©2003 Fairchild Semiconductor Corp.
FDD7030BL/FDU7030BL Rev CW)

FDD7030 Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 14A
IAS Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 14 A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 14 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VOSC = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15V,
VGS = 5 V
ID = 14 A,
Min Typ Max Units
174 mJ
14 A
30
26
V
mV/°C
1
±100
µA
nA
1 1.8
–5
3V
mV/°C
7.5 9.5
9.6 13
11 16
50
56
m
A
S
1425
350
150
1.3
pF
pF
pF
pF
11 20
9 18
31 50
13 23
14 20
4
5
ns
ns
ns
ns
nC
nC
nC
FDD7030BL/FDU7030BL Rev. B(W)


Features Datasheet pdf FDD7030BL/FDU7030BL June 2003 FDD7030B L/FDU7030BL 30V N-Channel PowerTrench® MOSFET General Description This N-Chan nel MOSFET has been designed specifical ly to improve the overall efficiency of DC/DC converters using either synchron ous or conventional switching PWM contr ollers. It has been optimized for low g ate charge, low RDS( ON) , fast switchi ng speed and extremely low RDS(ON) in a small package. Features • 56 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(O N) = 13 mΩ @ VGS = 4.5 V • Low gat e charge • Fast Switching • High pe rformance trench technology for extreme ly low RDS(ON) Applications • DC/DC converter • Motor Drives D D G S I- PAK (TO-251AA) G D S G D-PAK TO-252 (T O-252) S Absolute Maximum Ratings Sym bol VDSS VGSS ID TA=25oC unless otherw ise noted Parameter Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (No te 3) (Note 1a) (Note 1a) (Note 3) (Not e 1a) (Note 1b) Ratings 30 ±20 56 14 100 60 2.8 1.3 –55 to +175 Units V V A PD .
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