PowerTrench MOSFET. FDD8870 Datasheet

FDD8870 Datasheet PDF, Equivalent


Part Number

FDD8870

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 12 Pages
PDF Download
Download FDD8870 Datasheet PDF


FDD8870 Datasheet
March 2015
FDD8870 / FDU8870
N-Channel PowerTrench® MOSFET
30V, 160A, 3.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall ef ficiency of DC/ DC converters using
either synchronous or conven tional swit ching PW M
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 3.9m, VGS = 10V, ID = 35A
• rDS(ON) = 4.4m, VGS = 4.5V, ID = 35A
• High performance t rench t echnology for ext remely low
rDS(ON)
• Low gate charge
• High power and current handling capability
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
30
±20
160
150
21
Figure 4
690
160
1.07
-55 to 175
0.94
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FDD8870 / FDU8870 Rev. 1.2

FDD8870 Datasheet
Package Marking and Ordering Information
Device Marking
FDD8870
FDU8870
F
F
Device
FDD8870
FDU8870
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
ID
TJ
=
=
3157A5,oCVGS
=
10V,
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 35A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On T ime
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 35A
VGS = 10V, RGS = 3.3
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
Notes:
1: Package current limitation is 35A.
2: Starting TJ = 25°C, L = 1.77mH, IAS = 28A, VDD = 27V, VGS = 10V.
:
F
Min Typ Max Units
30 - - V
-
-
-
-
1
250
µA
- - ±100 nA
1.2 - 2.5
- 0.0032 0.0039
- 0.0036 0.0044
- 0.0051 0.0063
V
- 5160 -
pF
- 990 -
pF
- 590 -
pF
- 2.1 -
- 91 118 nC
- 48 62 nC
- 5 6.5 nC
- 14 - nC
- 9 - nC
- 18 - nC
- - 139 ns
- 9 - ns
- 83 - ns
- 83 - ns
- 42 - ns
- - 189 ns
- - 1.25 V
- - 1.0 V
- - 37 ns
- - 21 nC
©2008 Fairchild Semiconductor Corporation
FDD8870 / FDU8870 Rev. 1.2


Features Datasheet pdf FDD8870 / FDU8870 September 2004 FDD88 70 / FDU8870 N-Channel PowerTrench® MO SFET 30V, 160A, 3.9m Ω General Descri ption This N-Channel MOSFET has been de signed specifically to improve the over all efficiency of DC/DC converters usin g either synchronous or conventional sw itching PWM controllers. It has been op timized for low gate charge, low r DS(O N) and fast switching speed. Features • r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A • r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A • High performance trench technology for extremely low r DS(ON) • Low gate charge Application s • DC/DC converters • High power and current handling capability D G S I-PAK (TO-251AA) G D S G D D-PAK TO-2 52 (TO-252) S MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symb ol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain C urrent Continuous (T C = 25 o C, V GS = 10V) (Note 1) ID Continuous (T C = 25 o C, V GS = 4.5V) (Note 1) Continuous (T amb = 25 o C, VGS = 10 V, with Rθ JA = 52 .
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