FDD8876

FDD8876 / FDU8876 March 2015 FDD8876 / FDU8876 N-Channel PowerTrench® MOSFET 30V, 73A, 8.2mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications DC/DC converters Features rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability RoHS Compliant D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area D G S Ratings 30 ±20 73 66 15 Figure 4 95 70 0.47 -55 to 175 2.14 100 52 Units V V A A A A mJ W W/oC oC oC/W oC/W oC/W ©2008 Fairchild Semiconductor Corporation FDD8876 /...