Schottky Diode. FDFS2P103 Datasheet

FDFS2P103 Datasheet PDF, Equivalent


Part Number

FDFS2P103

Description

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDFS2P103 Datasheet PDF


FDFS2P103 Datasheet
September 2001
FDFS2P103
Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
General Description
The FDFS2P103 combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
–5.3 A, –30V RDS(ON) = 59 m@ VGS = –10 V
RDS(ON) = 92 m@ VGS = –4.5 V
VF < 0.52 V @ 1 A (TJ = 125°C)
VF < 0.57 V @ 1 A (TJ = 25°C)
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
Electrically independent Schottky and MOSFET
pinout for design flexibility
D
D
C
C
SO-8
Pin 1
G
S
A
A
A1
A2
S3
G4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDFS2P103
FDFS2P103
13’’
Ratings
30
±25
5.3
20
2
1.6
1
0.9
55 to +150
30
1
Tape width
12mm
8C
7C
6D
5D
Units
V
V
A
W
°C
V
A
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDFS2P103 Rev C(W)

FDFS2P103 Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = –250 µA
ID = –250 µA,Referenced to 25°C
VDS = –24 V,
VGS = 25 V,
VGS = –25 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –10 V, ID = –5.3 A
VGS = –4.5 V, ID = –4 A
VGS=–10 V, ID =–5.3A, TJ=125°C
VGS = –10 V, VDS = –5 V
VDS = –5V,
ID = –5.3 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6
VDS = –15 V, ID = –5.3 A,
VGS = –5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
Schottky Diode Characteristics
IR Reverse Leakage
VF Forward Voltage
VR = 30 V
IF = 1A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
–30
–1
–20
V
–23 mV/°C
–1
100
–100
µA
nA
nA
–1.7 –3
V
4.5 mV/°C
46 59 m
70 92
63 88
A
10 S
528 pF
132 pF
70 pF
7 14
13 24
14 25
9 17
5.3 8
2.2
1.6
ns
ns
ns
ns
nC
nC
nC
–1.3
–0.7 –1.2
A
V
15
6
0.41
0.32
100
30
0.57
0.52
µA
mA
V
V
FDFS2P103 Rev C(W)


Features Datasheet pdf FDFS2P103 September 2001 FDFS2P103 Int egrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forw ard voltage drop Schottky barrier recti fier in an SO-8 package. This device is designed specifically as a single pack age solution for DC to DC converters. I t features a fast switching, low gate c harge MOSFET with very low onstate resi stance. The independently connected Sch ottky diode allows its use in a variety of DC/DC converter topologies. Featur es • –5.3 A, –30V RDS(ON) = 59 m @ VGS = –10 V RDS(ON) = 92 mΩ @ VGS = –4.5 V • VF < 0.52 V @ 1 A (T J = 125°C) VF < 0.57 V @ 1 A (TJ = 25 C) • Schottky and MOSFET incorporate d into single power surface mount SO-8 package • Electrically independent Sc hottky and MOSFET pinout for design fle xibility D D C C A 1 A 2 S 3 G S A 8 C 7 C 6 D 5 D SO-8 Pin 1 G 4 A TA=25oC unless otherwise noted Absolute Maximum Rat.
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