FDFS2P106A

FDFS2P106A June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V RDS(ON) = 140 mΩ @ VGS = –4.5 V VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility D D C C A 1 A 2 S 3 G S A 8 C 7 C 6 D 5 D SO-8 Pin 1 G 4 A TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –60 ±20 (Note 1a) Units V V A W –3 –10 2 1.6 1 0.9 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) –55 to +150 45 1 °C V A Package Mark...