Schottky Diode. FDFS6N303 Datasheet

FDFS6N303 Datasheet PDF, Equivalent


Part Number

FDFS6N303

Description

N-Channel MOSFET with Schottky Diode

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
PDF Download
Download FDFS6N303 Datasheet


FDFS6N303 Datasheet
October 2001
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
Fairchild Semiconductor's FETKEY technology incorporates
a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the
package. The general purpose pinout has been chosen to
maximize flexibility and ease of use. FETKEY products are
particularly suited for switching applications such as DC/DC
buck, boost, synchronous, and non-synchronous converters
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint is
desirable.
6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V.
RDS(ON) = 0.050 @ VGS = 4.5 V.
VF < 0.28 V @ 0.1 A
VF < 0.42 V @ 3 A
VF < 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
C
C
FD6NF3S03
SO-8
G
S
pin 1
A
A
A1
A2
S3
G4
MOSFET Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
Schottky Diode Maximum Ratings
VRRM
IO
Repetitive Peak Reverse Voltage
Average Forward Current
TA = 25oC unless otherwise noted
(Note 1a)
FDFS6N303
30
±20
6
30
2
1.6
0.9
-55 to 150
30
2
8C
7C
6D
5D
Units
V
V
A
W
°C
V
A
© 2001 Fairchild Semiconductor Corporation
FDFS6N303 Rev. D1

FDFS6N303 Datasheet
Electrical Characteristics (TA = 25 oC unless otherwise noted )
MOSFET ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min Typ Max Units
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
TJ =125°C
IGSSF Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
IGSSR Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, I D = 6 A
VGS = 4.5 V, I D = 4.8 A
gFS Forward Transconductance
VDS = 10 V, ID = 6 A
ID(ON) On-State Drain Current
VGS = 10 V, VDS = 5 V
Ciss Input Capacitance
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance
f = 1.0 MHz
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
VDS = 15 V, ID = 6 A, VGS = 10 V
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
30
1
20
100
-100
1 1.7 3
0.025 0.035
0.043 0.05
12
15
350
220
80
12 17
7.5 15
12 25
13 25
6 15
V
µA
µA
nA
nA
V
S
A
pF
pF
pF
nC
ns
ns
ns
ns
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, I S= 1.3 A
SCHOTTKY DIODE CHARACTERISTICS
(Note 2)
1.3
0.8 1.2
A
V
BV Reverse Breakdown Voltage
IR Reverse Leakage
VF Forward Voltage
THERMAL CHARACTERISTICS
IR = 1 mA
VR = 30 V
IF = 0.1 A
IF = 3 A
IF = 6 A
30 V
0.5 mA
280 mV
420
500
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78 °C/W
40 °C/W
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
FDFS6N303 Rev. D1


Features Datasheet pdf October 2001 FDFS6N303 N-Channel MOSFET with Schottky Diode General Descriptio n Fairchild Semiconductor's FETKEY tech nology incorporates a high cell density MOSFET and low forward drop (0.35V) Sc hottky diode into a single surface moun t power package. The MOSFET and Schottk y diode are isolated inside the package . The general purpose pinout has been c hosen to maximize flexibility and ease of use. FETKEY products are particularl y suited for switching applications suc h as DC/DC buck, boost, synchronous, an d non-synchronous converters where the MOSFET is driven as low as 4.5V and fas t switching, high efficiency and small PCB footprint is desirable. Features 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 1 0 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V . VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pi nout for design flexibility. Ideal for DC/DC converter applications. SOT-23 SuperSOTTM-6 SuperSOTTM-8 .
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