October 2001
FDFS6N303 N-Channel MOSFET with Schottky Diode
General Description
Fairchild Semiconductor's FETKEY techno...
October 2001
FDFS6N303 N-Channel MOSFET with
Schottky Diode
General Description
Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package. The MOSFET and
Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable.
Features
6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D C C
D
A A S
1 2 3 4
8 7 6 5
C C D D
FS FD 303 6N
G A S
G
SO-8
pin 1
A
MOSFET Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
FDFS6N303 Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1c) (Note 1a)
30 ±20 6 30 2 1.6 0.9 -55 to 150
V V A
W
TJ,TSTG
Operating and Storage Temperature Range TA = 25o...