FDG311N

FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications Load switch Power management DC/DC converter D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25 C unless otherwise noted Parameter Ratings 20 (Note 1a) Units V V A W °C ±8 1.9 6 0.75 0.48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking .11 Device FDG311N Reel Size 7 Tape Width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDG311N Rev. D FDG311N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS IGSS TA = 25 C unless otherwise note...