N-Channel 2.5V Specified PowerTrench MOSFET
FDG311N
February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel MOSFET i...
Description
FDG311N
February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Features
1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.
Applications
Load switch Power management DC/DC converter
D D
S
1
6
2
5
SC70-6
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25 C unless otherwise noted
Parameter
Ratings
20
(Note 1a)
Units
V V A W °C
±8 1.9 6 0.75 0.48 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking .11 Device
FDG311N
Reel Size
7
Tape Width
8mm
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDG311N Rev. D
FDG311N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS IGSS
TA = 25 C unless otherwise note...
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