FDG316P

FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications DC/DC converter Load switch Power Management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T J , T stg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted Parameter Ratings -30 (Note 1a) Units V V A W °C ± 20 -1.6 -6 0.75 0.48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Tem perature Range Thermal Characteristics R θJA Therm al Resistance, Junction-to-Am bient (Note 1b) 260 ° C/W Package Marking and Ordering Information Device Marking .3 6 Device FDG316P Reel Size 7’’ Tape W idth 8m m Quantity 3000 units 200 1 Fairchild Semiconductor Corporation FDG316P Rev. D FDG316P Electrical Chara...